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| MITSUBISHI TRANSISTOR MODULES QM300HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-24B * * * * * IC Collector current ........................ 300A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-R6.5 7.5 9 930.25 16 16 7 14 16 9 E 10 10 480.25 8 4-6.5 BX B 14 E C 9 3 18.5 25 29 BX 2-M6 C 3-M4 35+1 - 0.5 62 24.5+1 - 0.5 LABEL 7 41 E B E Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-24B HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 300 300 1980 16 3000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 470 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm N*m kg*cm g Mounting screw M6 -- Mounting torque B(E) terminal screw M4 BX terminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V,Emitter open VEB=7V, Collector open IC=300A, IB=400mA IC=-300A (diode forward voltage) IC=300A, VCE=4.0V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=300A, IB1=600mA, -IB2=6.0A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 200 4.0 4.0 1.8 -- 2.5 15 3.0 0.063 0.3 0.04 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-24B HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 500 Tj=25C COLLECTOR CURRENT IC (A) IB=400mA DC CURRENT GAIN hFE 400 IB=200mA IB=100mA 300 IB=50mA 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 VCE=4V 200 100 Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0 0 1 2 3 4 5 VCE (V) 10 1 COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) BASE CURRENT IB (A) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 VCE=4.0V Tj=25C 101 7 5 4 3 2 10 0 7 5 4 3 2 VBE(sat) VCE(sat) SATURATION VOLTAGE 10 -1 2.8 3.2 3.6 4.0 4.4 VBE (V) 4.8 10-1 10 1 IB=400mA Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 5 4 ton, ts, tf (s) IC=300A IC=200A IC=100A 10 2 7 VCC=600V 5 IB1=0.6A 3 -IB2=6.0A 2 10 1 7 5 3 2 3 2 SWITCHING TIME ts 1 Tj=25C Tj=125C 0 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 2 3 5 7 10 1 10 0 7 tf 5 ton 3 2 10 -1 10 1 2 3 4 5 7 10 2 Tj=25C Tj=125C 2 3 4 5 7 10 3 IC (A) BASE CURRENT IB (A) COLLECTOR CURRENT Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-24B HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 10 0 tf VCC=600V IC=300A IB1=0.6A REVERSE BIAS SAFE OPERATING AREA 600 COLLECTOR CURRENT IC (A) ts, tf (s) Tj=125C IB2=-6A ts 500 400 300 200 100 0 SWITCHING TIME Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 200 400 600 800 1000 1200 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 100 50S 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) DC 100S 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 200 S COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 0.08 0.07 0.06 1m S 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) Zth (j-c) (C/ W) 0.05 0.04 0.03 0.02 0.01 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 10 3 7 5 4 3 2 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 10 1 0.2 0.6 1.0 1.4 1.8 2.2 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300HA-24B HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR SURGE CURRENT -ICSM (A) 3200 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 1 10 1 VCC=600V IB1=0.6A -IB2=6.0A Irr 7 5 4 3 2 10 0 Qrr trr 7 5 4 3 2 trr (s) Feb.1999 2800 2400 Irr (A), Qrr (c) 2000 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 2 Tj=25C Tj=125C 10 -1 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 5 7 0.40 0.32 Zth (j-c) (C/ W) 0.24 0.16 0.08 0 10 -3 2 3 5 7 10 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s) |
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